⚡ Semiconductor Band Theory Simulator
🎛️ Control Panel
Material Type
Silicon (Si)
Germanium (Ge)
Gallium Arsenide (GaAs)
Gallium Nitride (GaN)
Temperature (K)
300
Doping Concentration (cm⁻³)
1e15
Applied Voltage (V)
0.0
Electric Field (V/cm)
0
Measurement Noise (%)
Calibration Mode
▶️ Start Simulation
⏸️ Stop
🔄 Reset
💾 Export CSV
E-k Diagram
Density of States
3D Visualization
Oscilloscope
📊 Real-Time Measurements
Band Gap Energy
1.12
eV
Fermi Level
0.56
eV
Carrier Concentration
1.5e10
cm⁻³
Conductivity
0.0
S/m
Mobility
1400
cm²/V·s
Current Density
0.0
A/cm²
Effective Mass (e)
0.26
m₀
Frequency Response
0.0
GHz
📝 Data Collection Log